General Description

Using low power CMOS process, the AS1801B is
designed for low power, high performance omnipolar
detection hall-effect application, such as cover switch, contactless switch, solid state switch and lid close
sensor etc battery operation. The hall IC integrated an
on-chip hall voltage generator for magnetic sensing, a
comparator that amplifiers the hall voltage, a Chopper
amplifier, a Schmitt trigger to provide switching
hysteresis for noise rejection, and a complementary
output. The total power consumption of AS1801B is
typically less than 1.5uA at 1.8V power supply. AS1801B is designed to respond to alternating North
and South poles. When the magnetic flux density (B) is
larger than operate point (BOP), the output will be
turned on (low), the output is held until the magnetic
flux density (B) is lower than release point (BRP), then
turn off (high). The device is available in DFN1216-4L Package
and is rated over the -40°C to 85°C. The all packages
are RoHS and Green compliant.

Features

 Input Voltage Range : 1.60V to 3.65V
 Micro-power consumption ideal for battery
power applications
 Omnipolar Operation, easy to use as output
 Very high sensitivity hall sensor
 Low Power CMOS process technology
 Chopper stabilization amplifier stage
 Magnetic Sensitivity (typical)
BOPS=±30Gauss, BRPS=±20Gauss
 Good RF noise immunity
 No need pull-up resistor
 Small Solution Size
 RoHS & Green Compliant
 DFN1216-4L Package
 -40℃ to +85 ℃ Temperature Range

Applications

 Cover switch in clam-shell cellular phones
 Cover switch in Notebook, PC/PAD
 Contact-less switch in consumer products
 Solid State Switch
 Handheld Wireless Handset Awake Switch
 Lid close sensor for battery-powered devise
 Magnet proximity sensor for reed switch
replacement in low duty cycle applications
 DV, DSC, and White Goods