General Description

Using low power CMOS process, the AS1812B is
designed for low power, high performance unipolar
detection hall-effect application, such as cover switch, contactless switch, solid state switch and lid close
sensor etc battery operation. The hall IC integrated an
on-chip hall voltage generator for magnetic sensing, a
comparator that amplifiers the hall voltage, a Chopper
amplifier, a Schmitt trigger to provide switching
hysteresis for noise rejection, and a complementary
output. The total power consumption of AS1812B is
typically less than 1.0uA at 1.8V power supply. AS1812B is designed to respond to alternating South
pole. When the magnetic flux density (B) is larger than
operate point (BOPS), the output will be turned on (low),
the output is held until the magnetic flux density (B) is
lower than release point (BRPS), then turn off (high). The device is available in DFN1216-4L, DFN1010-4L and SIP-3L Package and is rated over the
-40°C to 85°C. The package is RoHS and Green
compliant.

Features

 Input Voltage Range : 1.65V to 5.5V
 Micro-power consumption ideal for battery
power applications
 Uniplar Operation, easy to use as output
 Very high sensitivity hall sensor
 Low Power CMOS process technology
 Chopper stabilization amplifier stage
 Magnetic Sensitivity (typical)
BOPS=40Gauss, BRPS=25Gauss
 Good RF noise immunity
 No need pull-up resistor
 Small Solution Size
 RoHS & Green Compliant
 DFN1216-4L, DFN1010-4L and SIP-3L
Package
 -40℃ to +85 ℃ Temperature Range

Applications

 Cover switch in clam-shell cellular phones
 Cover switch in Notebook, PC/PAD
 Contact-less switch in consumer products
 Solid State Switch
 Handheld Wireless Handset Awake Switch
 Lid close sensor for battery-powered devise
 Magnet proximity sensor for reed switch
replacement in low duty cycle applications
 DV, DSC, and White Goods